Highly luminescent nanostructures and methods of producing same

ABSTRACT

Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/867,583, filed Sep. 28, 2015, which a divisional of U.S. patentapplication Ser. No. 13/917,570, filed Jun. 13, 2013, now U.S. Pat. No.9,169,435 B2, which claims the benefit of the following priorprovisional patent application: U.S. Ser. No. 61/667,147, filed Jul. 2,2012, entitled “HIGHLY LUMINESCENT NANOSTRUCTURES AND METHODS OFPRODUCING SAME” by Wenzhuo Guo et al., which is incorporated herein byreference in its entirety for all purposes.

FIELD OF THE INVENTION

The invention pertains to the field of nanotechnology. Moreparticularly, the invention relates to highly luminescentnanostructures, particularly highly luminescent nanostructurescomprising an InP core and one or more shell layers. The invention alsorelates to methods of producing such nanostructures.

BACKGROUND OF THE INVENTION

Semiconductor nanostructures can be incorporated into a variety ofelectronic and optical devices. The electrical and optical properties ofsuch nanostructures vary, e.g., depending on their composition, shape,and size. For example, size-tunable properties of semiconductornanoparticles are of great interest for applications such as lightemitting diodes (LEDs), lasers, and biomedical labeling. Highlyluminescent nanostructures are particularly desirable for suchapplications

Quantum dots with a CdSe core have been produced that exhibit a highquantum yield. However, the intrinsic toxicity of cadmium raisesenvironmental concerns which limit the future application of suchcadmium-based nanoparticles. InP-based nanostructures have a similaremission range and are therefore an ideal substitute for CdSe basedmaterials. High quantum yield InP nanostructures, however, have beendifficult to obtain.

Methods for simply and reproducibly producing highly luminescentnanostructures, particularly highly luminescent InP nanostructures, arethus desirable. Among other aspects, the present invention provides suchmethods. A complete understanding of the invention will be obtained uponreview of the following.

SUMMARY OF THE INVENTION

Methods for producing highly luminescent nanostructures are described,including methods of enriching indium nanostructure cores, methods usingC5-C8 carboxylic acid ligands during shell synthesis, and methods fortwo-step growth of a layered ZnS_(x)Se_(1-x)/ZnS shell. Compositionsrelated to the methods of the invention are also featured, includinghighly luminescent nanostructures with high quantum yields.

One general class of embodiments provides methods for production ofcore/shell nanostructures (e.g., quantum dots). In the methods, ananostructure core is provided, and a shell surrounding the core isproduced by providing one or more precursors and reacting the precursorsin the presence of a C5-C8 carboxylic acid ligand to produce the shell.The carboxylic acid can be branched or, more preferably, unbranched.Optionally, the carboxylic acid is an unbranched monocarboxylic acid.The carboxylic acid can be saturated or unsaturated.

Thus, in one class of embodiments, the ligand is an alkyl carboxylicacid, preferably an unbranched alkyl carboxylic acid such as pentanoicacid, hexanoic acid, heptanoic acid, or octanoic (caprylic) acid. Inother embodiments, the ligand is an alkenyl carboxylic acid or analkynyl carboxylic acid, for example, 4-pentenoic acid.

The shell can be produced in the presence of a mixture of ligands, e.g.,a C5-C8 carboxylic acid ligand and an additional ligand. In one class ofembodiments, the additional ligand is a long chain fatty acid ligand,which long chain fatty acid comprises at least 12 carbon atoms.

In one aspect, the nanostructure core is a Group III-V core, e.g., anInP core. The shell typically comprises a material different than thecore. In one aspect, the shell comprises a Group II-VI semiconductor,for example, ZnS_(x)Se_(1-x), where 0≤x≤1. The shell optionallycomprises more than one layer, which are optionally synthesized indifferent steps. Accordingly, in one class of embodiments, the shellcomprises at least two layers and forming the shell includes providing afirst set of one or more precursors and reacting them in the presence ofthe C5-C8 carboxylic acid ligand to produce a first layer of the shell,and then providing a second set of one or more precursors and reactingthem in the presence of the C5-C8 carboxylic acid ligand to produce asecond layer of the shell. Different layers typically comprise differentmaterials. For example, the first layer can comprise ZnS_(x)Se_(1-x),where 0≤x<1 (e.g., where 0.25≤x≤0.75 or where x is about 0.5), and thesecond layer can comprise ZnS. Suitable precursors for shell formationare well known in the art. For example, suitable precursors forZnS_(x)Se_(1-x) shell formation, where 0<x<1, include diethyl zinc,bis(trimethylsilyl)selenide, and hexamethyldisilthiane, and suitableprecursors for ZnS shell formation include diethyl zinc andhexamethyldisilthiane.

If desired, the ligand(s) in which the shell was synthesized can bereplaced by a different ligand. For example, in one class ofembodiments, after shell formation the ligand is exchanged with adicarboxylic or polycarboxylic acid ligand (e.g., dodecenyl succinicacid), which can further increase quantum yield.

The methods optionally include incorporating the nanostructures into amatrix, a phosphor, and/or a device (e.g., an LED, backlighting unit,downlight, or other display or lighting unit or an optical filter) aftertheir synthesis. Essentially all of the features noted for the othermethods and compositions herein apply to these methods as well, asrelevant.

Nanostructures and compositions resulting from the methods are also afeature of the invention. Accordingly, one general class of embodimentsprovides a composition that includes a nanostructure (e.g., a quantumdot) and a C5-C8 carboxylic acid ligand bound to a surface of thenanostructure. The composition optionally includes a population of suchnanostructures with bound ligand. The carboxylic acid can be branchedor, more preferably, unbranched. Optionally, the carboxylic acid is anunbranched monocarboxylic acid. The carboxylic acid can be saturated orunsaturated.

Thus, in one class of embodiments, the ligand is an alkyl carboxylicacid, preferably an unbranched alkyl carboxylic acid such as pentanoicacid, hexanoic acid, heptanoic acid, or octanoic (caprylic) acid. Inother embodiments, the ligand is an alkenyl carboxylic acid or analkynyl carboxylic acid, for example, 4-pentenoic acid.

The composition optionally includes one or more additional ligands. Forexample, in one class of embodiments the composition also includes along chain fatty acid ligand that comprises at least 12 carbon atomsbound to the surface of the nanostructure. In a preferred class ofembodiments, the composition includes a dicarboxylic or polycarboxylicacid ligand bound to the surface of the nanostructure, e.g., dodecenylsuccinic acid.

The nanostructure can comprise essentially any desired material, forexample, a Group II-VI semiconductor, a Group III-V semiconductor, or acombination thereof. Thus, the nanostructure optionally comprises InPand/or ZnS_(x)Se_(1-x) where 0≤x≤1 (e.g., where x=0, x=1, 0<x<1,0.25≤x≤0.75, or x is about 0.5). The nanostructure optionally includesat least one shell.

In one class of embodiments, the nanostructure comprises an InP core anda ZnS_(x)Se_(1-x) shell, where 0≤x≤1, e.g., where 0<x<1, where0.25≤x≤0.75, or where x is about 0.5. For example, the nanostructure canbe an InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dot, where 0<x<1, e.g.,where 0.25≤x≤0.75 or where x is about 0.5.

The nanostructure or population of nanostructures is optionally embeddedin a matrix (e.g., an organic polymer, silicon-containing polymer,inorganic, glassy, and/or other matrix). In one class of embodiments,the nanostructure or population of nanostructures is incorporated into adevice, for example, an LED, backlighting unit, downlight, or otherdisplay or lighting unit or an optical filter. Essentially all of thefeatures noted for the other compositions and methods herein apply tothese compositions as well, as relevant.

As noted, core/shell nanostructures can include more than one layer intheir shell. For example, an InP core is advantageously coated with anintermediate layer of ZnSSe followed by an outer layer of ZnS.Accordingly, one general class of embodiments provides a population ofInP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots, where 0.25≤x≤0.75(e.g., x is about 0.5) and where the ZnS_(x)Se_(1-x) shell is betweenabout 0.3 and about 1.0 monolayer thick (e.g., about 0.5 monolayerthick) and the ZnS shell is between about 1.0 and about 3.0 monolayersthick (e.g., about 2 monolayers thick). In one class of embodiments, theZnS_(x)Se_(1-x) shell is about 0.5 monolayer thick and the ZnS shell isabout 2 monolayers thick.

The InP cores of the quantum dots optionally have an average diameterbetween about 1 nm and about 5 nm, e.g., between about 15 Å and about 20Å or between about 25 Å and about 30 Å. The population of nanostructuresis optionally embedded in a matrix and/or incorporated into a device,for example, an LED, backlighting unit, downlight, or other display orlighting unit or an optical filter. Essentially all of the featuresnoted for the other compositions and methods herein apply to thesecompositions as well, as relevant.

Another general class of embodiments provides methods for production ofcore/shell nanostructures (e.g., quantum dots) where the shell comprisesat least two layers. In the methods, an InP nanostructure core and afirst set of one or more precursors are provided. The precursors arereacted to produce a first layer of the shell, which first layercomprises ZnS_(x)Se_(1-x), where 0.25≤x≤0.75 (e.g., where x is about0.5). A second set of one or more precursors is then provided andreacted to produce a second layer of the shell, which second layercomprises ZnS.

Optionally, the core has an average diameter between about 1 nm andabout 5 nm. In one exemplary class of embodiments, the core has anaverage diameter between about 15 Å and about 20 Å. In another exemplaryclass of embodiments, the core has an average diameter between about 25Å and about 30 Å.

Suitable precursors for shell formation are well known in the art. Forexample, suitable precursors for ZnS_(x)Se_(1-x) shell formationinclude, but are not limited to, diethyl zinc,bis(trimethylsilyl)selenide, and hexamethyldisilthiane. Suitableprecursors for ZnS shell formation include, but are not limited to,diethyl zinc and hexamethyldisilthiane.

Thickness of the shell layers can be conveniently controlled bycontrolling the amount of precursor provided. Thus, in one class ofembodiments, providing a first set of one or more precursors andreacting the precursors to produce a first layer of the shell comprisesproviding the one or more precursors in an amount whereby, when thereaction is substantially complete, the first layer is between about 0.3and about 1.0 monolayer of ZnS_(x)Se_(1-x) thick, e.g., about 0.5monolayer of ZnS_(x)Se_(1-x) thick. Similarly, in one class ofembodiments providing a second set of one or more precursors andreacting the precursors to produce a second layer of the shell comprisesproviding the one or more precursors in an amount whereby, when thereaction is substantially complete, the second layer is between about1.0 and about 3.0 monolayers of ZnS thick, e.g., about 2 monolayers ofZnS thick.

Essentially all of the features noted for the other methods andcompositions herein apply to these methods as well, as relevant, forexample, with regard to enrichment of the cores, use of ligand, andincorporation of the resulting nanostructures into a matrix, phosphor,and/or device.

Enrichment of InP nanostructures with indium can significantly enhancetheir quantum yield. Thus, one general class of embodiments providesmethods for production of nanostructures. In the methods, InPnanostructures are produced in solution. After the InP nanostructuresare removed from the solution in which they were produced, they aresuspended in at least one solvent. The suspended nanostructures arecontacted with a first precursor, which first precursor comprises In(indium). Suitable first precursors include, e.g., indium carboxylatessuch as indium laurate.

The nanostructures can be of essentially any desired size. For example,they can have an average diameter between about 1 nm and about 5 nm. Inone exemplary class of embodiments, the InP nanostructures have anaverage diameter between about 15 Å and about 20 Å. In another exemplaryclass of embodiments, the InP nanostructures have an average diameterbetween about 25 Å and about 30 Å.

Following enrichment, the In-enriched InP nanostructures are optionallyused as cores to which one or more shells are added to producecore/shell nanostructures (e.g., core/shell quantum dots). Thus, in oneclass of embodiments, after the suspended nanostructures have beencontacted with the first precursor, one or more second precursors areadded and reacted to form a shell. Typically, the shell comprises amaterial other than InP, for example, another Group III-V material suchas GaP or a Group II-VI material such as ZnS or ZnSe. The shelloptionally comprises more than one layer. For example, the resultingnanostructures can be InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots,where 0<x<1. Accordingly, in one exemplary class of embodiments, formingthe shell includes providing a first set of one or more secondprecursors and reacting them to produce a first layer of the shell,which first layer comprises ZnS_(x)Se_(1-x), where 0.25≤x≤0.75 (e.g., xis about 0.5), and then providing a second set of one or more secondprecursors and reacting them to produce a second layer of the shell,which second layer comprises ZnS. Suitable precursors for shellformation are well known in the art. For example, suitable precursorsfor ZnSSe shell formation include diethyl zinc,bis(trimethylsilyl)selenide, and hexamethyldisilthiane, and suitableprecursors for ZnS shell formation include diethyl zinc andhexamethyldisilthiane.

Typically, the second precursors are reacted to form the shell in thepresence of a ligand. The ligand can be essentially any of those knownin the art, or, preferably, can be a C5-C8 carboxylic acid ligand, e.g.,any of those C5-C8 carboxylic acid ligands described herein. As anexample, the ligand can be an unbranched C5-C8 alkyl carboxylic acidsuch as hexanoic acid. If desired, the ligand(s) in which the InPnanostructure, InP core, and/or shell was synthesized can be replaced bya different ligand. For example, in one class of embodiments, aftershell formation the ligand is exchanged with a dicarboxylic orpolycarboxylic acid ligand (e.g., dodecenyl succinic acid).

Essentially all of the features noted for the other methods andcompositions herein apply to these methods as well, as relevant, forexample, with regard to enrichment of the cores, use of ligand, andincorporation of the resulting nanostructures into a matrix, phosphor,and/or device.

Highly luminescent nanostructures are also a feature of the invention.For example, one general class of embodiments provides a compositioncomprising a population of nanostructures, which population displays aphotoluminescence quantum yield of 70% or greater, wherein aphotoluminescence spectrum of the population has a full width at halfmaximum (FWHM) of 50 nm or less, and wherein the member nanostructurescomprise InP. Optionally, the nanostructures are substantially free ofGa. The population can display a photoluminescence quantum yield of 75%or greater, 80% or greater, 85% or greater, or even 90% or greater.

The photoluminescence spectrum of the nanostructures can coveressentially any desired portion of the spectrum. For example, thephotoluminescence spectrum of the population can have an emissionmaximum between 450 nm and 750 nm, e.g., between 500 nm and 650 nm. Inone class of embodiments, the photoluminescence spectrum of thepopulation has an emission maximum between 500 nm and 560 nm, e.g.,between 500 nm and 540 nm (e.g., in the green portion of the spectrum).In one class of embodiments, the photoluminescence spectrum of thepopulation has an emission maximum between 600 nm and 650 nm (e.g., inthe red portion of the spectrum).

As noted, the size distribution of the nanostructures (as indicated,e.g., by the full width at half maximum of the photoluminescencespectrum) is narrow. Optionally, the photoluminescence spectrum of thepopulation has a full width at half maximum of 45 nm or less, or even 40nm or less or 35 nm or less.

The nanostructures optionally include at least one shell. In one aspect,the nanostructures are quantum dots, e.g., quantum dots with an InP coreand one or more shells. In one class of embodiments, the nanostructuresare InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots, where 0<x<1, e.g.,where 0.25≤x≤0.75 or where x is about 0.5. In one class of embodiments,the ZnS_(x)Se_(1-x) layer of the shell is about 0.5 monolayer thick andthe ZnS layer of the shell is about 2.0 monolayers thick. Optionally,the InP cores have an average diameter between about 1 nm and about 5nm, e.g., between about 15 Å and about 20 Å. The average diameter of thequantum dots can be between about 1.8 nm and about 7.5 nm, e.g., betweenabout 30 Å and about 36 Å.

The composition optionally includes one or more nanostructure ligands,e.g., those described herein and/or those known in the art. Thus, in oneclass of embodiments, the composition includes a C5-C8 carboxylic acidligand bound to the nanostructures, e.g., an unbranched alkyl carboxylicacid such as pentanoic acid or hexanoic acid. In one class ofembodiments, the composition includes a dicarboxylic or polycarboxylicacid ligand bound to the nanostructures, e.g., dodecenyl succinic acid.

The population of nanostructures is optionally embedded in a matrix(e.g., an organic polymer, silicon-containing polymer, inorganic,glassy, and/or other matrix, incorporated into a nanostructure phosphor,and/or incorporated into a device, for example, an LED, backlightingunit, downlight, or other display or lighting unit or an optical filter.Essentially all of the features noted for the other compositions andmethods herein apply to these compositions as well, as relevant.

Another general class of embodiments provides a composition comprising apopulation of nanostructures, which population displays aphotoluminescence quantum yield of 75% or greater, wherein the membernanostructures comprise InP and are substantially free of Ga. Thepopulation can display a photoluminescence quantum yield of 80% orgreater, 85% or greater, or even 90% or greater.

The photoluminescence spectrum of the nanostructures can coveressentially any desired portion of the spectrum. For example, thephotoluminescence spectrum of the population can have an emissionmaximum between 450 nm and 750 nm, e.g., between 500 nm and 650 nm. Inone class of embodiments, the photoluminescence spectrum of thepopulation has an emission maximum between 500 nm and 560 nm, e.g.,between 500 nm and 540 nm (e.g., in the green portion of the spectrum).In one class of embodiments, the photoluminescence spectrum of thepopulation has an emission maximum between 600 nm and 650 nm (e.g., inthe red portion of the spectrum). The size distribution of thenanostructures can be relatively narrow. Thus, the photoluminescencespectrum of the population can have a full width at half maximum of 60nm or less, e.g., 50 nm or less, 45 nm or less, or even 40 nm or less or35 nm or less.

The nanostructures optionally include at least one shell. In one aspect,the nanostructures are quantum dots, e.g., quantum dots with an InP coreand one or more shells. In one class of embodiments, the nanostructuresare InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots, where 0<x<1, e.g.,where 0.25≤x≤0.75 or where x is about 0.5. In one class of embodiments,the ZnS_(x)Se_(1-x) layer of the shell is about 0.5 monolayer thick andthe ZnS layer of the shell is about 2.0 monolayers thick. Optionally,the InP cores have an average diameter between about 1 nm and about 5nm, e.g., between about 15 Å and about 20 Å. The average diameter of thequantum dots can be between about 1.8 nm and about 7.5 nm, e.g., betweenabout 30 Å and about 36 Å.

The composition optionally includes one or more nanostructure ligands,e.g., those described herein and/or those known in the art. Thus, in oneclass of embodiments, the composition includes a C5-C8 carboxylic acidligand bound to the nanostructures, e.g., an unbranched alkyl carboxylicacid such as pentanoic acid or hexanoic acid. In one class ofembodiments, the composition includes a dicarboxylic or polycarboxylicacid ligand bound to the nanostructures, e.g., dodecenyl succinic acid.

The population of nanostructures is optionally embedded in a matrix(e.g., an organic polymer, silicon-containing polymer, inorganic,glassy, and/or other matrix, incorporated into a nanostructure phosphor,and/or incorporated into a device, for example, an LED, backlightingunit, downlight, or other display or lighting unit or an optical filter.Essentially all of the features noted for the other compositions andmethods herein apply to these compositions as well, as relevant.

Another general class of embodiments provides a composition comprising apopulation of nanostructures, which population displays aphotoluminescence quantum yield of 65% or greater, wherein aphotoluminescence spectrum of the population has an emission maximumbetween 600 nm and 650 nm, and wherein the member nanostructurescomprise InP.

The nanostructures optionally include at least one shell. In one aspect,the nanostructures are quantum dots, e.g., quantum dots with an InP coreand one or more shells. In one class of embodiments, the nanostructuresare InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots, where 0<x<1, e.g.,where 0.25≤x≤0.75 or where x is about 0.5. In one class of embodiments,the ZnS_(x)Se_(1-x) layer of the shell is about 0.5 monolayer thick andthe ZnS layer of the shell is about 2.0 monolayers thick. Optionally,the InP cores have an average diameter between about 25 Å and about 30Å. The average diameter of the quantum dots can be between about 40 Åand about 46 Å. The size distribution of the nanostructures can berelatively narrow. For example, the photoluminescence spectrum of thepopulation can have a full width at half maximum of 45 nm or less.

The composition optionally includes one or more nanostructure ligands,e.g., those described herein and/or those known in the art. Thus, in oneclass of embodiments, the composition includes a C5-C8 carboxylic acidligand bound to the nanostructures, e.g., an unbranched alkyl carboxylicacid such as pentanoic acid or hexanoic acid. In one class ofembodiments, the composition includes a dicarboxylic or polycarboxylicacid ligand bound to the nanostructures, e.g., dodecenyl succinic acid.

The population of nanostructures is optionally embedded in a matrix(e.g., an organic polymer, silicon-containing polymer, inorganic,glassy, and/or other matrix, incorporated into a nanostructure phosphor,and/or incorporated into a device, for example, an LED, backlightingunit, downlight, or other display or lighting unit or an optical filter.Essentially all of the features noted for the other compositions andmethods herein apply to these compositions as well, as relevant.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows transmission electron micrographs of InP/ZnSSe/ZnSnanostructures at low resolution and high resolution FIG. 1B.

FIGS. 2A-2E illustrate optical characterization of green-emittingInP/ZnSSe/S quantum dots. FIG. 2A presents quantum yield measurementbased on fluorescein dye (fluorescein upper line, dots lower line). FIG.2B presents absorption spectra of fluorescein dye. FIG. 2C presentsphotoluminescence spectra of fluorescein dye. FIG. 2D presentsabsorption spectra of InP/ZnSSe/S dots. FIG. 2E presentsphotoluminescence spectra of InP/ZnSSe/S dots.

FIGS. 3A-3E illustrate optical characterization of red-emittingInP/ZnSSe/S quantum dots. FIG. 3A presents quantum yield measurementbased on rhodamine 640 dye (Rh 640, upper line; dots lower line). FIG.3B presents absorption spectra of rhodamine 640 dye. FIG. 3C presentsphotoluminescence spectra of rhodamine 640 dye. FIG. 3D presentsabsorption spectra of InP/ZnSSe/S dots. FIG. 3E presentsphotoluminescence spectra of InP/ZnSSe/S dots.

DEFINITIONS

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which the invention pertains. The following definitionssupplement those in the art and are directed to the current applicationand are not to be imputed to any related or unrelated case, e.g., to anycommonly owned patent or application. Although any methods and materialssimilar or equivalent to those described herein can be used in thepractice for testing of the present invention, the preferred materialsand methods are described herein. Accordingly, the terminology usedherein is for the purpose of describing particular embodiments only, andis not intended to be limiting.

As used in this specification and the appended claims, the singularforms “a,” “an” and “the” include plural referents unless the contextclearly dictates otherwise. Thus, for example, reference to “ananostructure” includes a plurality of such nanostructures, and thelike.

The term “about” as used herein indicates the value of a given quantityvaries by +/−10% of the value, or optionally +/−5% of the value, or insome embodiments, by +/−1% of the value so described. For example,“about 100 nm” encompasses a range of sizes from 90 nm to 110 nm,inclusive.

A “nanostructure” is a structure having at least one region orcharacteristic dimension with a dimension of less than about 500 nm,e.g., less than about 200 nm, less than about 100 nm, less than about 50nm, or even less than about 20 nm or less than about 10 nm. Typically,the region or characteristic dimension will be along the smallest axisof the structure. Examples of such structures include nanowires,nanorods, nanotubes, branched nanostructures, nanotetrapods, tripods,bipods, nanocrystals, nanodots, quantum dots, nanoparticles, and thelike. Nanostructures can be, e.g., substantially crystalline,substantially monocrystalline, polycrystalline, amorphous, or acombination thereof. In one aspect, each of the three dimensions of thenanostructure has a dimension of less than about 500 nm, e.g., less thanabout 200 nm, less than about 100 nm, less than about 50 nm, or evenless than about 20 nm or less than about 10 nm.

The term “heterostructure” when used with reference to nanostructuresrefers to nanostructures characterized by at least two different and/ordistinguishable material types. Typically, one region of thenanostructure comprises a first material type, while a second region ofthe nanostructure comprises a second material type. In certainembodiments, the nanostructure comprises a core of a first material andat least one shell of a second (or third etc.) material, where thedifferent material types are distributed radially about the long axis ofa nanowire, a long axis of an arm of a branched nanowire, or the centerof a nanocrystal, for example. (A shell can but need not completelycover the adjacent materials to be considered a shell or for thenanostructure to be considered a heterostructure; for example, ananocrystal characterized by a core of one material covered with smallislands of a second material is a heterostructure.) In otherembodiments, the different material types are distributed at differentlocations within the nanostructure; e.g., along the major (long) axis ofa nanowire or along a long axis of arm of a branched nanowire. Differentregions within a heterostructure can comprise entirely differentmaterials, or the different regions can comprise a base material (e.g.,silicon) having different dopants or different concentrations of thesame dopant.

As used herein, the “diameter” of a nanostructure refers to the diameterof a cross-section normal to a first axis of the nanostructure, wherethe first axis has the greatest difference in length with respect to thesecond and third axes (the second and third axes are the two axes whoselengths most nearly equal each other). The first axis is not necessarilythe longest axis of the nanostructure; e.g., for a disk-shapednanostructure, the cross-section would be a substantially circularcross-section normal to the short longitudinal axis of the disk. Wherethe cross-section is not circular, the diameter is the average of themajor and minor axes of that cross-section. For an elongated or highaspect ratio nanostructure, such as a nanowire, the diameter is measuredacross a cross-section perpendicular to the longest axis of thenanowire. For a spherical nanostructure, the diameter is measured fromone side to the other through the center of the sphere.

The terms “crystalline” or “substantially crystalline,” when used withrespect to nanostructures, refer to the fact that the nanostructurestypically exhibit long-range ordering across one or more dimensions ofthe structure. It will be understood by one of skill in the art that theterm “long range ordering” will depend on the absolute size of thespecific nanostructures, as ordering for a single crystal cannot extendbeyond the boundaries of the crystal. In this case, “long-rangeordering” will mean substantial order across at least the majority ofthe dimension of the nanostructure. In some instances, a nanostructurecan bear an oxide or other coating, or can be comprised of a core and atleast one shell. In such instances it will be appreciated that theoxide, shell(s), or other coating can but need not exhibit such ordering(e.g. it can be amorphous, polycrystalline, or otherwise). In suchinstances, the phrase “crystalline,” “substantially crystalline,”“substantially monocrystalline,” or “monocrystalline” refers to thecentral core of the nanostructure (excluding the coating layers orshells). The terms “crystalline” or “substantially crystalline” as usedherein are intended to also encompass structures comprising variousdefects, stacking faults, atomic substitutions, and the like, as long asthe structure exhibits substantial long range ordering (e.g., order overat least about 80% of the length of at least one axis of thenanostructure or its core). In addition, it will be appreciated that theinterface between a core and the outside of a nanostructure or between acore and an adjacent shell or between a shell and a second adjacentshell may contain non-crystalline regions and may even be amorphous.This does not prevent the nanostructure from being crystalline orsubstantially crystalline as defined herein.

The term “monocrystalline” when used with respect to a nanostructureindicates that the nanostructure is substantially crystalline andcomprises substantially a single crystal. When used with respect to ananostructure heterostructure comprising a core and one or more shells,“monocrystalline” indicates that the core is substantially crystallineand comprises substantially a single crystal.

A “nanocrystal” is a nanostructure that is substantiallymonocrystalline. A nanocrystal thus has at least one region orcharacteristic dimension with a dimension of less than about 500 nm,e.g., less than about 200 nm, less than about 100 nm, less than about 50nm, or even less than about 20 nm or less than about 10 nm. The term“nanocrystal” is intended to encompass substantially monocrystallinenanostructures comprising various defects, stacking faults, atomicsubstitutions, and the like, as well as substantially monocrystallinenanostructures without such defects, faults, or substitutions. In thecase of nanocrystal heterostructures comprising a core and one or moreshells, the core of the nanocrystal is typically substantiallymonocrystalline, but the shell(s) need not be. In one aspect, each ofthe three dimensions of the nanocrystal has a dimension of less thanabout 500 nm, e.g., less than about 200 nm, less than about 100 nm, lessthan about 50 nm, or even less than about 20 nm or less than about 10nm.

The term “quantum dot” (or “dot”) refers to a nanocrystal that exhibitsquantum confinement or exciton confinement. Quantum dots can besubstantially homogenous in material properties, or in certainembodiments, can be heterogeneous, e.g., including a core and at leastone shell. The optical properties of quantum dots can be influenced bytheir particle size, chemical composition, and/or surface composition,and can be determined by suitable optical testing available in the art.The ability to tailor the nanocrystal size, e.g., in the range betweenabout 1 nm and about 15 nm, enables photoemission coverage in the entireoptical spectrum to offer great versatility in color rendering.

A “carboxylic acid” is an organic acid having at least one carboxylgroup. A C5 carboxylic acid includes five carbon atoms, a C6 carboxylicacid includes six carbon atoms, a C7 carboxylic acid includes sevencarbon atoms, and a C8 carboxylic acid includes eight carbon atoms.

An “alkyl carboxylic acid” has the formula R—COOH, where R is an alkylgroup.

An “alkenyl carboxylic acid” has the formula R—COOH, where R is analkenyl group.

An “alkynyl carboxylic acid” has the formula R—COOH, where R is analkynyl group.

An “alkyl group” is a functional group that includes only single-bondedcarbon and hydrogen atoms. An alkyl group can be unbranched (i.e.,linear or straight-chain), branched, or cyclic.

An “alkenyl group” includes only carbon and hydrogen atoms but containsat least one carbon-to-carbon double bond. An alkenyl group can beunbranched (i.e., linear or straight-chain), branched, or cyclic.

An “alkynyl group” contains only carbon and hydrogen atoms and includesat least one triple bond between two carbon atoms. An alkynyl group canbe unbranched (i.e., linear or straight-chain), branched, or cyclic.

A “dicarboxylic acid” is a compound having two carboxylic acid moieties(e.g., two monocarboxylic acid moieties or one dicarboxylic acidmoiety). A “polycarboxylic acid” is a compound having three or morecarboxylic acid moieties.

A “fatty acid” is a monocarboxylic acid with an aliphatic tail(saturated or unsaturated, but including only carbon and hydrogenatoms).

A “precursor” in a nanostructure synthesis reaction is a chemicalsubstance (e.g., a compound or element) that reacts, e.g., with anotherprecursor, and thereby contributes at least one atom to thenanostructure produced by the reaction.

A “ligand” is a molecule capable of interacting (whether weakly orstrongly) with one or more faces of a nanostructure, e.g., throughcovalent, ionic, van der Waals, or other molecular interactions with thesurface of the nanostructure.

“Photoluminescence quantum yield” is the ratio of photons emitted tophotons absorbed, e.g., by a nanostructure or population ofnanostructures. As known in the art, quantum yield is typicallydetermined by a comparative method using well-characterized standardsamples with known quantum yield values.

Unless clearly indicated otherwise, ranges listed herein are inclusive.

A variety of additional terms are defined or otherwise characterizedherein.

DETAILED DESCRIPTION

Methods for colloidal synthesis of a variety of nanostructures are knownin the art. Such methods include techniques for controllingnanostructure growth, e.g., to control the size and/or shapedistribution of the resulting nano structures.

In a typical colloidal synthesis, semiconductor nanostructures areproduced by rapidly injecting precursors that undergo pyrolysis into ahot solution (e.g., hot solvent and/or surfactant). The precursors canbe injected simultaneously or sequentially. The precursors rapidly reactto form nuclei. Nanostructure growth occurs through monomer addition tothe nuclei, typically at a growth temperature that is lower than theinjection/nucleation temperature.

Surfactant molecules interact with the surface of the nanostructure. Atthe growth temperature, the surfactant molecules rapidly adsorb anddesorb from the nanostructure surface, permitting the addition and/orremoval of atoms from the nanostructure while suppressing aggregation ofthe growing nanostructures. In general, a surfactant that coordinatesweakly to the nanostructure surface permits rapid growth of thenanostructure, while a surfactant that binds more strongly to thenanostructure surface results in slower nanostructure growth. Thesurfactant can also interact with one (or more) of the precursors toslow nanostructure growth.

Nanostructure growth in the presence of a single surfactant typicallyresults in spherical nanostructures. Using a mixture of two or moresurfactants, however, permits growth to be controlled such thatnon-spherical nanostructures can be produced, if, for example, the two(or more) surfactants adsorb differently to different crystallographicfaces of the growing nanostructure.

A number of parameters are thus known to affect nanostructure growth andcan be manipulated, independently or in combination, to control the sizeand/or shape distribution of the resulting nanostructures. Theseinclude, e.g., temperature (nucleation and/or growth), precursorcomposition, time-dependent precursor concentration, ratio of theprecursors to each other, surfactant composition, number of surfactants,and ratio of surfactant(s) to each other and/or to the precursors.

Synthesis of Group II-VI nanostructures has been described, e.g., inU.S. Pat. Nos. 6,225,198, 6,322,901, 6,207,229, 6,607,829, 7,060,243,7,374,824, 6,861,155, 7,125,605, 7,566,476, 8,158,193, and 8,101,234 andUS patent application publications 2011/0262752 and 2011/0263062.

Although Group II-VI nanostructures such as CdSe/CdS/ZnS core/shellquantum dots can exhibit desirable luminescence behavior, as notedabove, issues such as the toxicity of cadmium limit the applications forwhich such nanostructures can be used. Less toxic alternatives withfavorable luminescence properties are thus highly desirable. Group III-Vnanostructures in general, and InP-based nanostructures in particular,offer an ideal substitute for cadmium-based materials due to theircompatible emission range.

Synthesis of Group III-V nanostructures has been described, e.g., inU.S. Pat. No. 5,505,928 to Alivisatos et al. entitled “Preparation ofIII-V semiconductor nanocrystals,” U.S. Pat. No. 6,306,736 by Alivisatoset al. entitled “Process for forming shaped group III-V semiconductornanocrystals, and product formed using process,” U.S. Pat. No.6,576,291, U.S. Pat. No. 6,821,337, U.S. Pat. No. 7,138,098, US patentapplication publication 2003/0214699 by Banin et al. entitled “Methodfor producing inorganic semiconductor nanocrystalline rods and theiruse,” Wells et al. (1989) “The use of tris(trimethylsilyl)arsine toprepare gallium arsenide and indium arsenide” Chem. Mater. 1:4-6, andGuzelian et al. (1996) “Colloidal chemical synthesis andcharacterization of InAs nanocrystal quantum dots” 69: 1432-1434.

In particular, synthesis of InP-based nanostructures has been described,e.g., in Xie et al. (2007) “Colloidal InP nanocrystals as efficientemitters covering blue to near-infrared” J. Am. Chem. Soc.129:15432-15433, Micic et al. (2000) “Core-shell quantum dots of latticematched ZnCdSe₂ shells on InP cores: Experiment and theory” J. Phys.Chem. B 104:12149-12156, Liu et al. (2008) “Coreduction colloidalsynthesis of III-V nanocrystals: The case of InP” Angew. Chem. Int. Ed.47:3540-3542, Li et al. (2008) “Economic synthesis of high quality InPnanocrystals using calcium phosphide as the phosphorus precursor” Chem.Mater. 20:2621-2623, Battaglia and Peng (2002) “Formation of highquality InP and InAs nanocrystals in a noncoordinating solvent” NanoLett. 2:1027-1030, Kim et al. (2012) “Highly luminescent InP/GaP/ZnSnanocrystals and their application to white light-emitting diodes” J.Am. Chem. Soc. 134:3804-3809, Nann et al. (2010) “Water splitting byvisible light: A nanophotocathode for hydrogen production” Angew. Chem.Int. Ed. 49:1574-1577, Borchert et al. (2002) “Investigation of ZnSpassivated InP nanocrystals by XPS” Nano Lett. 2:151-154, Li and Reiss(2008) “One-pot synthesis of highly luminescent InP/ZnS nanocrystalswithout precursor injection” J. Am. Chem. Soc. 130:11588-11589, Hussainet al. (2009) “One-pot fabrication of high-quality InP/ZnS (core/shell)quantum dots and their application to cellular imaging” Chemphyschem10:1466-70, Xu et al. (2006) “Rapid synthesis of high-quality InPnanocrystals” J. Am. Chem. Soc. 128:1054-1055, Micic et al. (1997)“Size-dependent spectroscopy of InP quantum dots” J. Phys. Chem. B101:4904-4912, Haubold et al. (2001) “Strongly luminescent InP/ZnScore-shell nanoparticles” Chemphyschem 5:331-334, CrosGagneux et al.(2010) “Surface chemistry of InP quantum dots: A comprehensive study” J.Am. Chem. Soc. 132:18147-18157, Micic et al. (1995) “Synthesis andcharacterization of InP, GaP, and GaInP₂ quantum dots” J. Phys. Chem.99:7754-7759, Guzelian et al. (1996) “Synthesis of size-selected,surface-passivated InP nanocrystals” J. Phys. Chem. 100:7212-7219, Luceyet al. (2005) “Monodispersed InP quantum dots prepared by colloidalchemistry in a non-coordinating solvent” Chem. Mater. 17:3754-3762, Limet al. (2011) “InP@ZnSeS, core@composition gradient shell quantum dotswith enhanced stability” Chem. Mater. 23:4459-4463, and Zanet al. (2012)“Experimental Studies on Blinking Behavior of Single InP/ZnS QuantumDots: Effects of Synthetic Conditions and UV Irradiation” J. Phys. Chem.C 116:394-3950. However, such efforts have had only limited success inproducing InP nanostructures with high quantum yields.

In one aspect, the present invention overcomes the above noteddifficulties (e.g., low quantum yield) by providing techniques forenriching InP nanostructures or nanostructure cores with indium. Ligandswhose use in shell growth enhances quantum yield of the resultingcore/shell nanostructures are described. Methods for two-step growth ofa layered ZnS_(x)Se_(1-x)/ZnS shell are also described. Compositionsrelated to the methods of the invention are also featured, includinghighly luminescent nanostructures with high quantum yields and narrowsize distributions.

Nanostructure Core Enrichment

Enrichment of InP nanostructures with indium can significantly enhancetheir quantum yield. Without limitation to any particular mechanism,reactivity of the indium precursor is typically lower than that of thephosphorus precursor, resulting in nanostructures having inherentdefects in the crystal structure since the ratio of In:P in thenanostructures is less than 1:1. Again without limitation to anyparticular mechanism, enrichment of such nanostructures with indiumafter their initial synthesis can “fill the holes” in the crystallattice, increasing the In:P ratio (e.g., to 1:1 or essentially 1:1) andimproving quality of the crystal structure. Enrichment increases quantumyield and also typically results in a red shift in emission wavelength.

Thus, one general class of embodiments provides methods for productionof nanostructures. In the methods, InP nanostructures are produced,typically in solution. After the InP nanostructures are removed from thesolution in which they were produced, they are suspended in at least onesolvent. The suspended nanostructures are contacted with a firstprecursor, which first precursor comprises In. The solution in which thesuspended nanostructures are contacted with the In-containing precursoris substantially free of any P-containing precursor, since thenanostructures are removed from the solution in which they weresynthesized (and optionally washed before resuspension) and since noP-containing precursor is added to the suspended nanostructures. (Itwill be evident that, although the nanostructures are preferably removedfrom the solution in which they were produced before enrichment isperformed, enrichment can instead be performed with the nanostructuresremaining in their growth solution, and such embodiments are also afeature of the invention.)

The InP nanostructures can be produced as described hereinbelow (see,e.g., the sections entitled “Synthesis of InP Core for Green-EmittingCore/Shell Dots” and “Synthesis of InP Core for Red-Emitting Core/ShellDots” in the Examples) or as known in the art (see, e.g., U.S. Pat. No.7,557,028, U.S. Pat. No. 8,062,967, U.S. Pat. No. 7,645,397, and USpatent application publication 2010/0276638 (e.g., Example 7), as wellas the references listed hereinabove). The nanostructures can be ofessentially any desired size. For example, the InP nanostructures canhave an average diameter between about 1 nm and about 5 nm. In oneexemplary class of embodiments, the InP nanostructures have an averagediameter between about 15 Å and about 20 Å. In another exemplary classof embodiments, the InP nanostructures have an average diameter betweenabout 25 Å and about 30 Å. Size can be determined as is known in theart, for example, using transmission electron microscopy and/or physicalmodeling.

The first (In-containing) precursor can be the same as, or differentthan, the In-containing precursor(s) employed during InP nanostructuresynthesis. Suitable first precursors include, but are not limited to,InCl₃, chloroindium oxalate, indium oxide, indium phenoxy, and trialkyl,trialkenyl, and trialkynyl indium compounds, among other compounds usedin the art as precursors for nanostructure synthesis. In a preferredclass of embodiments, the first precursor is an indium carboxylate(i.e., an indium (III) carboxylate), for example, indium acetate, indiumstearate, or indium myristate. In a particularly preferred embodiment,the first precursor is indium laurate.

Since a red shift of absorption and photoluminescence wavelengthindicative of nanostructure growth is observed upon enrichment withindium, this red shift can be monitored to ensure that an adequateamount of first precursor is provided. For example, a quantity of indiumlaurate precursor such that the amount of indium in the precursor addedto the solution is 7% (mole %) of the amount of indium in the InPnanostructures in the solution has been observed to be the minimumrequired to produce a red shirt; additional precursor does not increasethe red shift.

Suitable solvents are known in the art and include those commonly usedfor nanostructure synthesis, particularly non-coordinating solvents.Exemplary solvents include 1-octadecene, 1-decene, 1-dodecene, andtetradecane.

The temperature at which the nanostructures and first precursor arecontacted is typically lower than that at which the nanostructures weregrown, for example, 20-80° C. lower (e.g., 200-230° C. compared to agrowth temperature of 230-300° C.). The solution containing thenanostructures and precursor is maintained at such temperature untilenrichment is complete, e.g., as determined by monitoring absorption andluminescence. Without limitation to any particular mechanism, the redshift in absorption and photoluminescence wavelength initially observedis thought to represent coating of In on the nanostructures, followed byan increase in emission intensity thought to represent diffusion of Ininto the core without an additional change in the size of thenanostructures. Incubation of the solution containing the nanostructuresand precursor can be performed until no further increase in brightnessis observed (e.g., for 1-2 hours). The enrichment process can result ina significant increase in quantum yield of the nanostructures, e.g., 10%or more.

Following enrichment, the In-enriched InP nanostructures are optionallyused as cores to which one or more shells are added to producecore/shell nanostructures (e.g., core/shell quantum dots). Thus, in oneclass of embodiments, after the suspended nanostructures have beencontacted with the first precursor, one or more second precursors areadded and reacted to form a shell. Typically, the shell comprises amaterial other than InP, for example, another Group III-Y material suchas GaP or a Group II-VI material such as ZnS or ZnSe.

The shell optionally comprises more than one layer (i.e., the core issurrounded by more than one shell). For example, the resultingnanostructures can be InP/GaP/ZnS, InP/ZnSe/ZnS, InP/ZnS eTe/ZnS,InP/MnSe/ZnS, InP/CdS/ZnS, InP/ZnCdSe/ZnS, InP/ZnCdMgSe/ZnS, orInP/ZnS_(x)Se_(1-x)/ZnS nanostructures, or, preferably,InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots, where 0<x<1. Amultilayer shell is optionally synthesized in several discrete steps, asdescribed in greater detail hereinbelow; see, e.g., the sectionsentitled “Multilayered Shells,” “Indium Enrichment and Shelling Processfor Green-Emitting Dots,” and “Indium Enrichment and Shelling Processfor Red-Emitting Dots.” Accordingly, in one exemplary class ofembodiments, forming the shell includes providing a first set of one ormore second precursors and reacting them to produce a first layer of theshell, which first layer comprises ZnS_(x)Se_(1-x), where 0<x<1, andthen providing a second set of one or more second precursors andreacting them to produce a second layer of the shell, which second layercomprises ZnS. Preferably, 0.25≤x≤0.75, e.g., x is about 0.5.

Suitable precursors for shell formation are well known in the art. Forexample, suitable precursors for ZnS_(x)Se_(1-x) shell formation, where0<x<1, include diethyl zinc, zinc carboxylates (e.g., zinc stearate orzinc hexanoate), bis(trimethylsilyl)selenide, elemental selenium (e.g.,dissolved in tributylphosphine), hexamethyldisilthiane, and organicthiols (e.g., 1-dodecanethiol, tert-dodecylmercaptan, or 1-octanethiol),and suitable precursors for ZnS shell formation include diethyl zinc,zinc carboxylates (e.g., zinc stearate or zinc hexanoate),hexamethyldisilthiane, and organic thiols (e.g., 1-dodecanethiol,tertdodecylmercaptan, or 1-octanethiol). Shell layer thickness isoptionally controlled by controlling the amount of precursor(s)provided, as described hereinbelow.

Typically, the second precursors are reacted to form the shell in thepresence of a ligand. The ligand can be essentially any of those knownin the art, or, preferably, can be a C5-C8 carboxylic acid ligand, e.g.,any of those C5-C8 carboxylic acid ligands described hereinbelow; seethe section entitled “C5-C8 Carboxylic Acid Ligands.” As an example, theligand can be an unbranched C5-C8 alkyl carboxylic acid such as hexanoicacid.

If desired, the ligand(s) in which the InP nanostructure, InP core,and/or shell was synthesized can be replaced by a different ligand. Forexample, in one class of embodiments, after shell formation the ligandis exchanged with a dicarboxylic or polycarboxylic acid ligand (e.g.,dodecenyl succinic acid).

A variety of suitable ligands (e.g., for core synthesis, shellsynthesis, and/or post-synthesis exchange) are known in the art. As afew examples, in addition to those described herein, such ligandsinclude (but are not limited to) dicarboxylic acid, polycarboxylic acid,dicarbinol, alcohol, amine, polymeric silicone, and/or organic polymericligands as described in US patent application publications 2010/0276638and 2007/0034833, amine functional polystyrene ligands andpolyethyleneimine or modified polyethyleneimine ligands as described inUS patent application publication 2012/0113672, silsesquioxane ligands(including polyhedral oligomeric silsesquioxane and/or carboxylic acidligands) as described in U.S. Pat. Nos. 7,267,875 and 7,585,564 and USpatent application publication 2008/0118755, carboxylic acid siloxanepolymer ligands as described in U.S. patent application Ser. No.13/803,596, and alkylamine siloxane polymer ligands as described in U.S.provisional patent application 61/663,234 and U.S. patent applicationSer. No. 13/803,596.

The resulting nanostructures (e.g., quantum dots, e.g.,InP/ZnS_(x)Se_(1-x)/ZnS quantum dots) optionally display a highphotoluminescence quantum yield, e.g., 65% or greater, 70% or greater,75% or greater, 80% or greater, 85% or greater, or even 90% or greater.The photoluminescence spectrum of the nanostructures can coveressentially any desired portion of the spectrum. For example, thephotoluminescence spectrum can have an emission maximum between 450 nmand 750 nm, e.g., between 500 nm and 650 nm, between 500 nm and 560 nm,or between 600 nm and 650 nm. The photoluminescence spectrum can have afull width at half maximum of 60 nm or less, e.g., 50 nm or less, 45 nmor less, or even 40 nm or less or 35 nm or less, reflecting the narrowsize distribution of the nanostructures.

The resulting nanostructures are optionally embedded in a matrix (e.g.,an organic polymer, silicon-containing polymer, inorganic, glassy,and/or other matrix), used in production of a nanostructure phosphor,and/or incorporated into a device, e.g., an LED, backlight, downlight,or other display or lighting unit or an optical filter. Exemplaryphosphors and lighting units can, e.g., generate a specific color lightby incorporating a population of nanostructures with an emission maximumat or near the desired wavelength or a wide color gamut by incorporatingtwo or more different populations of nanostructures having differentemission maxima. A variety of suitable matrices are known in the art.See, e.g., U.S. Pat. No. 7,068,898 and US patent applicationpublications 2010/0276638, 2007/0034833, and 2012/0113672. Exemplarynanostructure phosphor films, LEDs, backlighting units, etc. aredescribed, e.g., in US patent application publications 2010/0276638,2012/0113672, 2008/0237540, 2010/0110728, and 2010/0155749 and U.S. Pat.Nos. 7,374,807, 7,645,397, 6,501,091, and 6,803,719.

As another example, the resulting nanostructures can be used for imagingor labeling, e.g., biological imaging or labeling. Thus, the resultingnanostructures are optionally covalently or noncovalently bound tobiomolecule(s), including, but not limited to, a peptide or protein(e.g., an antibody or antibody domain, avidin, streptavidin,neutravidin, or other binding or recognition molecule), a ligand (e.g.,biotin), a polynucleotide (e.g., a short oligonucleotide or longernucleic acid), a carbohydrate, or a lipid (e.g., a phospholipid or othermicelle). One or more nanostructures can be bound to each biomolecule,as desired for a given application Such nanostructure-labeledbiomolecules find use, for example, in vitro, in vivo, and in cellulo,e.g., in exploration of binding or chemical reactions as well as insubcellular, cellular, and organismal labeling.

Nanostructures resulting from the methods are also a feature of theinvention. Thus, one class of embodiments provides a population of InPnanostructures or nanostructures comprising InP cores in which thenanostructures or cores have an In:P ratio of essentially 1:1 (e.g.,greater than 0.99:1). The nanostructures are optionally quantum dots.

It will be evident that the methods can be applied to synthesis ofnanostructures other than InP nanostructures where the ratio of the twoor more elements constituting the nanostructures does not reach itsideal during synthesis of the nanostructures. Accordingly, one generalclass of embodiments provides methods for production of nanostructuresin which nanostructures comprising a first element and a second elementare produced in solution. The nanostructures are removed from thesolution in which they were produced and then suspended in at least onesolvent. The suspended nanostructures are contacted with a precursorcomprising the first element (but typically not with a precursorcomprising the second element), at a temperature and for a timesufficient for enrichment of the nanostructures with the first elementto occur as described above for indium.

Shell Formation

In one aspect, the highly luminescent nanostructures of the presentinvention include a core and at least one shell. The shell can, e.g.,increase the quantum yield and/or stability of the nanostructures.Typically, the core and the one or more shells comprise differentmaterials. The core is generally synthesized first, optionally enrichedas described above, and then additional precursors from which the shell(or a layer thereof) is produced are provided.

Typically, the core and shell(s) are synthesized in the presence of atleast one nanostructure ligand. Ligands can, e.g., enhance themiscibility of nanostructures in solvents or polymers (allowing thenanostructures to be distributed throughout a composition such that thenanostructures do not aggregate together), increase quantum yield ofnanostructures, and/or preserve nanostructure luminescence (e.g., whenthe nanostructures are incorporated into a matrix). The ligand(s) forcore synthesis and for shell synthesis can but need not be the same.Similarly, following synthesis, any ligand on the surface of thenanostructures can be exchanged for a different ligand with otherdesirable properties.

Suitable ligands for synthesis of nanostructure cores, including InPcores, are known in the art. Exemplary ligands include fatty acids(e.g., lauric, caproic, myristic, palmitic, stearic, and oleic acid),organic phosphine oxides (e.g., trioctylphosphine oxide (TOPO),triphenylphosphine oxide, and tributylphosphine oxide), and organicamines (e.g., dodecylamine and oleylamine).

Although ligands for synthesis of nanostructure shells are also known inthe art, recent work at Nanosys has demonstrated that carboxylic acidligands shorter than the fatty acids typically used for core synthesisresult in core/shell nanostructures exhibiting higher quantum yields.

C5-C8 Carboxylic Acid Ligands

Accordingly, one general class of embodiments provides methods forproduction of core/shell nanostructures. In the methods, a nanostructurecore is provided, and a shell surrounding the core is produced byproviding one or more precursors and reacting the precursors in thepresence of a C5-C8 carboxylic acid ligand to produce the shell. Thecarboxylic acid can be branched (e.g., having a one carbon branch) or,more preferably, unbranched. Without limitation to any particularmechanism, ligands with little steric hindrance (such as, e.g.,unbranched carboxylic acid ligands) offer maximum nanostructure surfacecoverage, resulting in higher quantum yields. Optionally, the carboxylicacid is an unbranched monocarboxylic acid. The carboxylic acid can besaturated or unsaturated.

Thus, in one class of embodiments, the ligand is an alkyl carboxylicacid, preferably an unbranched alkyl carboxylic acid such as pentanoicacid, hexanoic acid, heptanoic acid, or octanoic (caprylic) acid. Inother embodiments, the ligand is an alkenyl carboxylic acid or analkynyl carboxylic acid, for example, 4-pentenoic acid.

The shell can be produced in the presence of a mixture of ligands, e.g.,a C5-C8 carboxylic acid ligand and an additional ligand (whether addedduring shell synthesis or remaining in the reaction mixture from coresynthesis). For example, shell synthesis can be performed with a C5-C8carboxylic acid ligand and an additional carboxylic acid ligand, e.g., afatty acid ligand. In one class of embodiments, the additional ligand isa long chain fatty acid ligand, which long chain fatty acid comprises atleast 12 carbon atoms. The fatty acid can be saturated or unsaturated,and can comprise less than 30 or less than 20 carbon atoms. Suitablefatty acids include, e.g., oleic acid, lauric acid, myristic acid,palmitic acid, or stearic acid. To maximize quantum yield of theresulting nanostructures, the long chain fatty acid preferablyconstitutes less than 50 molar percent of the total ligand in themixture, more preferably, less than 25 molar %, less than 10 molar %, orless than 5 molar %.

In one aspect, the nanostructure core is a Group III-V core, e.g., anInAs, GaP, GaN, InN, or GaAs core. In one class of embodiments, thenanostructure core is an InP core. The core can be produced as describedhereinbelow (see, e.g., the sections entitled “Synthesis of InP Core forGreen-Emitting Core/Shell Dots” and “Synthesis of InP Core forRed-Emitting Core/Shell Dots” in the Examples) or as known in the art(see, e.g., U.S. Pat. No. 7,557,028, U.S. Pat. No. 8,062,967, U.S. Pat.No. 7,645,397, and US patent application publication 2010/0276638 (e.g.,Example 7), as well as the references listed hereinabove). The core canbe of essentially any desired size. For example, the core optionally hasan average diameter between about 1 nm and about 5 nm. In one exemplaryclass of embodiments, the core has an average diameter between about 15Å and about 20 Å. In another exemplary class of embodiments, the corehas an average diameter between about 25 Å and about 30 Å. Optionally,the resulting nanostructures are quantum dots.

The shell typically comprises a material different than the core. In oneaspect, the shell comprises a Group II-VI semiconductor, for example,ZnS_(x)Se_(1-x), where 0≤x≤1 (e.g., where x=0, x=1, 0<x<1, 0.25≤x≤0.75,or x is about 0.5), ZnS, ZnSe, ZnSeTe, MnSe, MgSe, CdS, CdSe, ZnCdSe, orZnCdMgSe.

The shell optionally comprises more than one layer. A multilayer shellis optionally synthesized in several discrete steps, as described ingreater detail hereinbelow; see, e.g., the sections entitled“Multilayered Shells,” “Indium Enrichment and Shelling Process forGreen-Emitting Dots,” and “Indium Enrichment and Shelling Process forRedEmitting Dots.” Accordingly, in one class of embodiments, the shellcomprises at least two layers and forming the shell includes providing afirst set of one or more precursors and reacting them in the presence ofthe C5-C8 carboxylic acid ligand to produce a first layer of the shell,and then providing a second set of one or more precursors and reactingthem in the presence of the C5-C8 carboxylic acid ligand to produce asecond layer of the shell. Different layers typically comprise differentmaterials. For example, the first layer can comprise ZnS_(x)Se_(1-x),where 0<x<1 (e.g., where 0.25≤x≤0.75 or where x is about 0.5), and thesecond layer can comprise ZnS.

Suitable precursors for shell formation are well known in the art. Forexample, suitable precursors for ZnS_(x)Se_(1-x) shell formation, where0<x<1, include diethyl zinc, zinc carboxylates (e.g., zinc stearate orzinc hexanoate), bis(trimethylsilyl)selenide, elemental selenium (e.g.,dissolved in tributylphosphine), hexamethyldisilthiane, and organicthiols (e.g., 1-dodecanethiol, tert-dodecylmercaptan, or 1-octanethiol),and suitable precursors for ZnS shell formation include diethyl zinc,zinc carboxylates (e.g., zinc stearate or zinc hexanoate),hexamethyldisilthiane, and organic thiols (e.g., 1-dodecanethiol,tertdodecylmercaptan, or 1-octanethiol). Shell layer thickness isoptionally controlled by controlling the amount of precursor(s)provided, as described hereinbelow.

If desired, the ligand(s) in which the shell was synthesized can bereplaced by a different ligand. A variety of suitable ligands are knownin the art, for example, the dicarboxylic acid, polycarboxylic acid,dicarbinol, alcohol, amine, polymeric silicone, and/or organic polymericligands described in US patent application publications 2010/0276638 and2007/0034833, the amine functional polystyrene ligands andpolyethyleneimine or modified polyethyleneimine ligands described in USpatent application publication 2012/0113672, the silsesquioxane ligands(including polyhedral oligomeric silsesquioxane and/or carboxylic acidligands) described in U.S. Pat. Nos. 7,267,875 and 7,585,564 and USpatent application publication 2008/0118755, the carboxylic acidsiloxane polymer ligands as described in U.S. patent application Ser.No. 13/803,596, and the alkylamine siloxane polymer ligands described inU.S. provisional patent application 61/663,234 and U.S. patentapplication Ser. No. 13/803,596. For example, in one class ofembodiments, after shell formation the ligand is exchanged with adicarboxylic or polycarboxylic acid ligand (e.g., dodecenyl succinicacid), which can further increase quantum yield.

The resulting nanostructures (e.g., quantum dots, e.g.,InP/ZnS_(x)Se_(1-x)/ZnS quantum dots) optionally display a highphotoluminescence quantum yield, e.g., 65% or greater, 70% or greater,75% or greater, 80% or greater, 85% or greater, or even 90% or greater.The photoluminescence spectrum of the nanostructures can coveressentially any desired portion of the spectrum. For example, thephotoluminescence spectrum can have an emission maximum between 450 nmand 750 nm, e.g., between 500 nm and 650 nm, between 500 nm and 560 nm,or between 600 nm and 650 nm. The photoluminescence spectrum can have afull width at half maximum of 60 nm or less, e.g., 50 nm or less, 45 nmor less, or even 40 nm or less or 35 nm or less.

The resulting nanostructures are optionally embedded in a matrix (e.g.,an organic polymer, silicon-containing polymer, inorganic, glassy,and/or other matrix), used in production of a nanostructure phosphor,and/or incorporated into a device, e.g., an LED, backlighting unit,downlight, or other display or lighting unit or an optical filter, orbound to a biomolecule, as for the embodiments described above.

Nanostructures and compositions resulting from the methods are also afeature of the invention. Accordingly, one general class of embodimentsprovides a composition that includes a nanostructure (e.g., a quantumdot) and a C5-C8 carboxylic acid ligand bound to a surface of thenanostructure. The composition optionally includes a population of suchnanostructures with bound ligand. As will be appreciated, “bound” ligandis ligand that interacts (whether weakly or strongly) with one or morefaces of a nanostructure, e.g., through covalent, ionic, van der Waals,or other molecular interactions with the surface of the nanostructure.Bound ligand typically remains associated with the nanostructures whenthey are pelleted by centrifugation, precipitated, or otherwisefractionated. The carboxylic acid can be branched (e.g., having a onecarbon branch) or, more preferably, unbranched. Optionally, thecarboxylic acid is an unbranched monocarboxylic acid. The carboxylicacid can be saturated or unsaturated.

Thus, in one class of embodiments, the ligand is an alkyl carboxylicacid, preferably an unbranched alkyl carboxylic acid such as pentanoicacid, hexanoic acid, heptanoic acid, or octanoic (caprylic) acid. Inother embodiments, the ligand is an alkenyl carboxylic acid or analkynyl carboxylic acid, for example, 4-pentenoic acid.

The composition optionally includes one or more additional ligands. Forexample, in one class of embodiments the composition also includes afatty acid ligand (saturated or unsaturated) bound to the surface of thenanostructure. Optionally, the fatty acid is long chain fatty acid thatcomprises at least 12 carbon atoms, and can comprise less than 30 orless than 20 carbon atoms. Suitable fatty acids include, e.g., oleicacid, lauric acid, myristic acid, palmitic acid, and stearic acid. Tomaximize quantum yield of the nanostructure, the long chain fatty acidpreferably constitutes less than 50 molar % of the total ligand in thecomposition, more preferably, less than 25 molar %, less than 10 molar%, or less than 5 molar %. In a preferred class of embodiments, thecomposition includes a dicarboxylic or polycarboxylic acid ligand boundto the surface of the nanostructure, e.g., dodecenyl succinic acid. Alarge number of other suitable ligands are known in the art; see, e.g.,the dicarboxylic acid, polycarboxylic acid, dicarbinol, alcohol, amine,polymeric silicone, and/or organic polymeric ligands described in USpatent application publications 2010/0276638 and 2007/0034833, the aminefunctional polystyrene ligands and polyethyleneimine or modifiedpolyethyleneimine ligands described in US patent application publication2012/0113672, the silsesquioxane ligands (including polyhedraloligomeric silsesquioxane and/or carboxylic acid ligands) described inU.S. Pat. Nos. 7,267,875 and 7,585,564 and US patent applicationpublication 2008/0118755, the carboxylic acid siloxane polymer ligandsas described in U.S. patent application Ser. No. 13/803,596, and thealkylamine siloxane polymer ligands described in U.S. provisional patentapplication 61/663,234 and U.S. patent application Ser. No. 13/803,596.

The nanostructure can comprise essentially any desired material, forexample, a Group II-VI semiconductor, a Group III-V semiconductor, or acombination thereof. Thus, the nanostructure optionally comprises InP,ZnS_(x)Se_(1-x) where 0≤x≤1 (e.g., where x=0, x=1, 0<x<1, 0.25≤x≤0.75,or x is about 0.5), ZnS, ZnSe, ZnSeTe, MnSe, MgSe, CdS, CdSe, ZnCdSe,ZnCdMgSe, InAs, GaP, GaN, InN, and/or GaAs. The nanostructure optionallyincludes at least one shell.

In one class of embodiments, the nanostructure comprises an InP core anda ZnS_(x)Se_(1-x) shell, where 0≤x≤1, e.g., where 0<x<1, where0.25≤x≤0.75, or where x is about 0.5. For example, the nanostructure canbe an InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dot, where 0<x<1, e.g.,where 0.25≤x≤0.75 or where x is about 0.5. The nanostructure (e.g.,quantum dot, e.g., InP/ZnS_(x)Se_(1-x)/ZnS quantum dot) optionally has aphotoluminescence quantum yield of 65% or greater, e.g., 70% or greater,75% or greater, 80% or greater, 85% or greater, or even 90% or greater.The photoluminescence spectrum of the nanostructure can coveressentially any desired portion of the spectrum. For example, thephotoluminescence spectrum can have an emission maximum between 450 nmand 750 nm, e.g., between 500 nm and 650 nm, between 500 nm and 560 nm,or between 600 nm and 650 nm. The photoluminescence spectrum for apopulation of the nanostructures can have a full width at half maximumof 60 nm or less, e.g., 50 nm or less, 45 nm or less, or even 40 nm orless or 35 nm or less.

The nanostructure or population of nanostructures is optionally embeddedin a matrix (e.g., an organic polymer, silicon-containing polymer,inorganic, glassy, and/or other matrix). In one class of embodiments,the nanostructure or population of nanostructures is incorporated into adevice, for example, an LED, backlighting unit, downlight, or otherdisplay or lighting unit or an optical filter. As noted above, exemplarymatrices and devices are known in the art. Also as noted above, thenanostructure can be covalently or noncovalently bound to a biomolecule.

Multilayered Shells

As noted, core/shell nanostructures can include more than one layer intheir shell. For example, an InP core is advantageously coated with anintermediate layer of ZnSSe followed by an outer layer of ZnS. ZnSSe hasa smaller lattice mismatch with InP than does ZnS. Providing a thinintermediate layer of ZnSSe over the InP core thus increases quantumyield. Application of a ZnS outer layer further increases quantum yieldand also enhances stability of the nano structures.

Although graded ZnSSe shells have been described (Lim et al. (2011)“InP@ZnSeS, core@composition gradient shell quantum dots with enhancedstability” Chem. Mater. 23:4459-4463), synthesis of a layered ZnSSe/ZnSshell in at least two discrete steps provides greater control overthickness of the resulting layers. Similarly, synthesis of the core andthe shell in different steps also provides greater flexibility, forexample, the ability to employ different solvent and ligand systems inthe core and shell synthesis. Multi-step synthesis techniques can thusfacilitate production of nanostructures with a narrow size distribution(i.e., a small FWHM) and high quantum yield. Accordingly, one aspect ofthe invention provides methods for forming a shell comprising at leasttwo layers, in which one or more precursors are provided and reacted toform a first layer, and then (typically when formation of the firstlayer is substantially complete) one or more precursors for formation ofa second layer are provided and reacted.

One general class of embodiments provides methods for production ofcore/shell nanostructures (e.g., quantum dots) where the shell comprisesat least two layers. In the methods, an InP nanostructure core and afirst set of one or more precursors are provided. The precursors arereacted to produce a first layer of the shell, which first layercomprises ZnS_(x)Se_(1-x), where 0<x<1 (preferably where 0.25≤x≤0.75, orwhere x is about 0.5). A second set of one or more precursors isprovided and reacted to produce a second layer of the shell, whichsecond layer comprises ZnS. Typically, the second set of precursors isprovided after reaction of the first set to form a first layer issubstantially complete (e.g., when at least one of the first precursorsis depleted or removed from the reaction or when no additional growth isdetectable).

The InP core can be produced as described hereinbelow (see, e.g., thesections entitled “Synthesis of InP Core for Green-Emitting Core/ShellDots” and “Synthesis of InP Core for Red-Emitting Core/Shell Dots” inthe Examples) or as known in the art (see, e.g., U.S. Pat. No.7,557,028, U.S. Pat. No. 8,062,967, U.S. Pat. No. 7,645,397, and USpatent application publication 2010/0276638 (e.g., Example 7), as wellas the references listed hereinabove). The core can be of essentiallyany desired size. Optionally, the core has an average diameter betweenabout 1 nm and about 5 nm. In one exemplary class of embodiments, thecore has an average diameter between about 15 Å and about 20 Å. Inanother exemplary class of embodiments, the core has an average diameterbetween about 25 Å and about 30 Å.

Suitable precursors for shell formation are well known in the art. Forexample, suitable precursors for ZnS_(x)Se_(1-x) shell formation, where0<x<1, include, but are not limited to, diethyl zinc, zinc carboxylates(e.g., zinc stearate or zinc hexanoate), bis(trimethylsilyl)selenide,elemental selenium (e.g., dissolved in tributylphosphine),hexamethyldisilthiane, and organic thiols (e.g., 1-dodecanethiol,tert-dodecylmercaptan, or 1-octanethiol). Suitable precursors for ZnSshell formation include, but are not limited to, diethyl zinc, zinccarboxylates (e.g., zinc stearate or zinc hexanoate),hexamethyldisilthiane, and organic thiols (e.g., 1-dodecanethiol,tert-dodecylmercaptan, or 1-octanethiol).

Thickness of the shell layers can be conveniently controlled bycontrolling the amount of precursor provided. For a given layer, atleast one of the precursors is optionally provided in an amount whereby,when the growth reaction is substantially complete, the layer is ofpredetermined thickness. If more than one different precursor isprovided, either the amount of each precursor can be so limited or oneof the precursors can be provided in limiting amount while the othersare provided in excess. Suitable precursor amounts for various resultingdesired shell thicknesses can be readily calculated. For example, theInP core can be dispersed in solution after its synthesis andpurification, and its concentration can be calculated, e.g., by UV/Visspectroscopy using the Beer-Lambert law. The extinction coefficient canbe obtained from bulk InP. The size of the InP core can be determined,e.g., by excitonic peak of UV/Vis absorption spectrum and physicalmodeling based on quantum confinement. With the knowledge of particlesize, molar quantity, and the desired resulting thickness of shellingmaterial, the amount of precursor can be calculated using the bulkcrystal parameters (i.e., the thickness of one monolayer of shellingmaterial).

In one class of embodiments, providing a first set of one or moreprecursors and reacting the precursors to produce a first layer of theshell comprises providing the one or more precursors in an amountwhereby, when the reaction is substantially complete, the first layer isbetween about 0.3 and about 1.0 monolayer of ZnS_(x)Se_(1-x) thick,e.g., about 0.5 monolayer of ZnS_(x)Se_(1-x) thick. Typically, thisthickness is calculated assuming that precursor conversion is 100%efficient. (As noted above, a shell can but need not completely coverthe underlying material. Without limitation to any particular mechanismand purely for the sake of example, where the first layer of the shellis about 0.5 monolayer of ZnS_(x)Se_(1-x) thick, the core can be coveredwith small islands of ZnS_(x)Se_(1-x) or about 50% of the cationic sitesand 50% of the anionic sites can be occupied by the shell material.)Similarly, in one class of embodiments providing a second set of one ormore precursors and reacting the precursors to produce a second layer ofthe shell comprises providing the one or more precursors in an amountwhereby, when the reaction is substantially complete, the second layeris between about 1.0 and about 3.0 monolayers of ZnS thick, e.g., about2 monolayers of ZnS thick or about 2.8-3 monolayers thick. Given, e.g.,that one monolayer of ZnS_(0.5)Se_(0.5) is 3.19 Å thick and onemonolayer of ZnS is 3.12 Å thick, thickness of the resulting layers in Acan be calculated if desired.

Typically, the precursors are reacted to form the shell layers in thepresence of a ligand. The ligand can be essentially any of those knownin the art, or, preferably, can be a C5-C8 carboxylic acid ligand, e.g.,any of those C5-C8 carboxylic acid ligands described above; see thesection entitled “C5-C8 Carboxylic Acid Ligands.” As an example, theligand can be an unbranched C5-C8 alkyl carboxylic acid such as hexanoicacid. If desired, the ligand(s) in which the shells were synthesized canbe replaced by a different ligand. A variety of suitable ligands (e.g.,for core synthesis, shell synthesis, and/or subsequent exchange) areknown in the art. As a few examples, in addition to those describedherein, such ligands include (but are not limited to) dicarboxylic acid,polycarboxylic acid, dicarbinol, alcohol, amine, polymeric silicone,and/or organic polymeric ligands as described in US patent applicationpublications 2010/0276638 and 2007/0034833, amine functional polystyreneligands and polyethyleneimine or modified polyethyleneimine ligands asdescribed in US patent application publication 2012/0113672,silsesquioxane ligands (including polyhedral oligomeric silsesquioxaneand/or carboxylic acid ligands) as described in U.S. Pat. Nos. 7,267,875and 7,585,564 and US patent application publication 2008/0118755,carboxylic acid siloxane polymer ligands as described in U.S. patentapplication Ser. No. 13/803,596, and alkylamine siloxane polymer ligandsas described in U.S. provisional patent application 61/663,234 and U.S.patent application Ser. No. 13/803,596. For example, in one class ofembodiments, after shell formation the ligand is exchanged with adicarboxylic or polycarboxylic acid ligand (e.g., dodecenyl succinicacid).

The resulting nanostructures (e.g., quantum dots, e.g.,InP/ZnS_(x)Se_(1-x)/ZnS quantum dots) optionally display a highphotoluminescence quantum yield, e.g., 65% or greater, 70% or greater,75% or greater, 80% or greater, 85% or greater, or even 90% or greater.The photoluminescence spectrum of the nanostructures can coveressentially any desired portion of the spectrum. For example, thephotoluminescence spectrum can have an emission maximum between 450 nmand 750 nm, e.g., between 500 nm and 650 nm, between 500 nm and 560 nm,or between 600 nm and 650 nm. The photoluminescence spectrum can have afull width at half maximum of 60 nm or less, e.g., 50 nm or less, 45 nmor less, or even 40 nm or less or 35 nm or less.

The resulting nanostructures are optionally embedded in a matrix (e.g.,an organic polymer, silicon-containing polymer, inorganic, glassy,and/or other matrix), used in production of a nanostructure phosphor,and/or incorporated into a device, e.g., an LED, backlighting unit,downlight, or other display or lighting unit or an optical filter, orbound to a biomolecule, as described above.

Nanostructures resulting from the methods are also a feature of theinvention. Thus, one class of embodiments provides a population ofInP/ZnS_(x)Se_(1-x)/ZnS core/shell nanostructures, where 0<x<1, whereinthe ZnS_(x)Se_(1-x) shell is between about 0.3 and about 1.0 monolayerthick (e.g., about 0.5 monolayer thick) and the ZnS shell is betweenabout 1.0 and about 3.0 monolayers thick (e.g., about 2 monolayers thickor about 2.8-3 monolayers thick). In a preferred class of embodiments,0.25≤x≤0.75, e.g., x is about 0.5. In one class of embodiments, theZnS_(x)Se_(1-x) shell is about 0.5 monolayer thick and the ZnS shell isabout 2 monolayers thick. In one class of embodiments, theZnS_(x)Se_(1-x) shell is about 0.5 monolayer thick and the ZnS shell isabout 2.8-3.0 monolayers thick.

In one class of embodiments, the nanostructures are quantum dots. TheInP cores of the quantum dots optionally have an average diameterbetween about 1 nm and about 5 nm, e.g., between about 15 Å and about 20Å or between about 25 Å and about 30 Å. The nanostructures (e.g.,quantum dots) optionally display a high photoluminescence quantum yield,e.g., 65% or greater, 70% or greater, 75% or greater, 80% or greater,85% or greater, or even 90% or greater. The photoluminescence spectrumof the nanostructures can cover essentially any desired portion of thespectrum. For example, the photoluminescence spectrum can have anemission maximum between 450 nm and 750 nm, e.g., between 500 nm and 650nm, between 500 nm and 560 nm, or between 600 nm and 650 nm. Thephotoluminescence spectrum can have a full width at half maximum of 60nm or less, e.g., 50 nm or less, 45 nm or less, or even 40 nm or less or35 nm or less.

The nanostructures optionally have a ligand bound to their surface, forexample, any of those ligands described hereinabove (e.g., a C5-C8carboxylic acid ligand, a fatty acid ligand, a dicarboxylic acid ligand,and/or a polycarboxylic acid ligand). The population of nanostructuresis optionally embedded in a matrix (e.g., an organic polymer,silicon-containing polymer, inorganic, glassy, and/or other matrix)and/or incorporated into a device, for example, an LED, backlightingunit, downlight, or other display or lighting unit, as described above.Also as noted above, the nanostructures can be covalently ornoncovalently bound to a biomolecule.

Highly Luminescent Nanostructures

Employing the various techniques detailed herein (e.g., indium coreenrichment, synthesis of ZnSSe/ZnS shells, and/or use of C5-C8carboxylic acid ligands during shell synthesis followed by ligandreplacement with dicarboxylic acid or polycarboxylic acid ligands)permits synthesis of nanostructures exhibiting quantum yields higherthan those previously achieved in the art. Highly luminescentnanostructures are thus a feature of the invention.

One general class of embodiments provides a composition comprising apopulation of nanostructures, which population displays aphotoluminescence quantum yield of 65% or greater, wherein the membernanostructures comprise InP. Optionally, the member nanostructures aresubstantially free of Ga. The population can display a photoluminescencequantum yield of 70% or greater, 75% or greater, 80% or greater, 85% orgreater, or even 90% or greater. For example, the quantum yield can bebetween 75% and 95%, e.g., between 80% and 95% or between 85% and 95%.

The photoluminescence spectrum of the nanostructures can coveressentially any desired portion of the spectrum, particularly thevisible spectrum. For example, the nanostructures can emit in the red,orange, yellow, green, blue, indigo, and/or violet range. Optionally,the photoluminescence spectrum of the population has an emission maximumbetween 450 nm and 750 nm, for example, between 500 nm and 650 nm. Inone class of embodiments, the photoluminescence spectrum of thepopulation has an emission maximum between 500 nm and 560 nm, e.g.,between 500 nm and 540 nm (e.g., in the green portion of the spectrum).In one class of embodiments, the photoluminescence spectrum of thepopulation has an emission maximum between 600 nm and 650 nm (e.g., inthe red portion of the spectrum).

The size distribution of the nanostructures can be relatively narrow.Thus, the photoluminescence spectrum of the population can have a fullwidth at half maximum of 60 nm or less, e.g., 50 nm or less, 45 nm orless, or even 40 nm or less or 35 nm or less.

The nanostructures optionally include at least one shell. In one aspect,the nanostructures are quantum dots, e.g., quantum dots with an InP coreand one or more shells. In one class of embodiments, the nanostructuresare InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots, where 0<x<1, e.g.,where 0.25≤x≤0.75 or where x is about 0.5. In one class of embodiments,the ZnS_(x)Se_(1-x) layer of the shell is between about 0.3 and about1.0 monolayer of ZnS_(x)Se_(1-x) thick, e.g., about 0.5 monolayer ofZnS_(x)Se_(1-x) thick. In one class of embodiments, the ZnS layer of theshell is between about 1.0 and about 3.0 monolayers of ZnS thick, e.g.,about 2.0 monolayers of ZnS thick or about 2.8-3 mono layers thick.

The nanostructures can be of essentially any desired size. For example,the nanostructures can be InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantumdots where the InP cores have an average diameter between about 15 Å andabout 20 Å, e.g., where green emission is desired. As another example,the nanostructures can be InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantumdots where the InP cores have an average diameter between about 25 Å andabout 30 Å, e.g., where red emission is desired. The average diameter ofthe quantum dots can be between about 30 Å and about 36 Å or betweenabout 40 Å and about 46 Å, again for green and red dots, respectively.Optionally, the average diameter of the quantum dots is between about1.5 nm and about 10 nm (e.g., between about 1.5 nm and about 8 nm orbetween about 1.8 nm and about 7.5 nm) and/or the cores have an averagediameter between about 1 nm and about 5 nm.

The composition optionally includes one or more nanostructure ligands,e.g., those described herein and/or those known in the art. Thus, in oneclass of embodiments, the composition includes a C5-C8 carboxylic acidligand bound to the nanostructures. The carboxylic acid can be branched(e.g., having a one carbon branch) or, more preferably, unbranched.Optionally, the carboxylic acid is an unbranched monocarboxylic acid.The carboxylic acid can be saturated or unsaturated.

Thus, in one class of embodiments, the ligand is an alkyl carboxylicacid, preferably an unbranched alkyl carboxylic acid such as pentanoicacid, hexanoic acid, heptanoic acid, or octanoic (caprylic) acid. Inother embodiments, the ligand is an alkenyl carboxylic acid or analkynyl carboxylic acid, for example, 4-pentenoic acid. In one class ofembodiments, the composition includes a fatty acid ligand (e.g., lauric,caproic, myristic, palmitic, stearic, or oleic acid).

In one class of embodiments, the composition includes a dicarboxylic orpolycarboxylic acid ligand bound to the nanostructures, e.g., dodecenylsuccinic acid. Optionally, the composition includes a C5-C8 carboxylicacid ligand (e.g., one of those described above) and a dicarboxylic orpolycarboxylic acid ligand; a fatty acid ligand is optionally alsoincluded. A large number of other suitable ligands are known in the art;see, e.g., the dicarboxylic acid, polycarboxylic acid, dicarbinol,alcohol, amine, polymeric silicone, and/or organic polymeric ligandsdescribed in US patent application publications 2010/0276638 and2007/0034833, the amine functional polystyrene ligands andpolyethyleneimine or modified polyethyleneimine ligands described in USpatent application publication 2012/0113672, the silsesquioxane ligands(including polyhedral oligomeric silsesquioxane and/or carboxylic acidligands) described in U.S. Pat. Nos. 7,267,875 and 7,585,564 and USpatent application publication 2008/0118755, the carboxylic acidsiloxane polymer ligands as described in U.S. patent application Ser.No. 13/803,596, and the alkylamine siloxane polymer ligands described inU.S. provisional patent application 61/663,234 and U.S. patentapplication Ser. No. 13/803,596.

The population of nanostructures is optionally embedded in a matrix(e.g., an organic polymer, silicon-containing polymer, inorganic,glassy, and/or other matrix). In one class of embodiments, thepopulation of nanostructures is incorporated into a device, for example,an LED, backlighting unit, downlight, or other display or lighting unitor an optical filter. As noted above, exemplary matrices and devices areknown in the art. Also as noted above, the nanostructures can becovalently or noncovalently bound to a biomolecule.

EXAMPLES

The following sets forth a series of experiments that demonstrate growthof highly luminescent nanostructures, including indium enrichment of InPcores, synthesis of a two layer ZnSSe/ZnS shell in two steps using ashort chain carboxylic acid ligand, and post-synthesis ligand exchange.

It is understood that the examples and embodiments described herein arefor illustrative purposes only and that various modifications or changesin light thereof will be suggested to persons skilled in the art and areto be included within the spirit and purview of this application andscope of the appended claims. Accordingly, the following examples areoffered to illustrate, but not to limit, the claimed invention.

Example 1: Synthesis of Highly Luminescent Quantum Dots Synthesis of InPCore for Green-Emitting Core/Shell Dots

To produce the InP cores, 5 g of trioctylphosphine oxide (TOPO), 2.33 gof indium acetate (8 mmol), and 4.797 g of lauric acid (24 mmol) areadded to a reaction flask. The mixture is heated to 160° C. for 40minutes and then 250° C. for 20 minutes under vacuum. The reactiontemperature is then increased to 300° C. under N₂ flow. At thistemperature, 1 g tris(trimethylsilyl)phosphine (4 mmol) in 3 gtrioctylphosphine (TOP) is quickly injected into the reaction flask, andreaction temperature is kept at 260° C. After one minute, the reactionis stopped by removing the heating element, and the reaction solution isallowed to cool to room temperature. 8 ml toluene is added to thereaction mixture in the glove box, and the InP dots are precipitated outby addition of 25 ml ethanol to the mixture followed by centrifugationand decantation of the supernatant. The InP dots obtained are thendissolved in hexane. The dot concentration is determined by UV-Visabsorption measurement based on the bulk InP extinction coefficient at350 nm.

For additional details on core synthesis, see Example 7 of US patentapplication publication 2010/0276638.

Indium Laurate Precursor Preparation

To produce an indium laurate precursor for indium core enrichment, 10 gof 1-octadecene (ODE), 146 mg indium acetate (0.5 mmol), and 300 mglauric acid (1.5 mmol) are added to a reaction flask. The mixture isheated to 140° C. for 2 hours under vacuum to obtain a clear solution.This precursor solution is kept in a glove box at room temperature untilneeded. The indium laurate precipitates due to low solubility at roomtemperature; a desired amount of the indium laurate in ODE mixture isheated to about 90° C. to form a clear solution and then the desiredamount of the precursor solution is measured out when needed.

Indium Enrichment and Shelling Process for Green-Emitting Dots

To achieve indium core enrichment, 25 mg InP cores in solution inhexane, 6 ml ODE, and 0.5 g of indium laurate in ODE (from the previousstep) are added to a reaction flask. The mixture is put under vacuum for10 minutes at room temperature. The temperature is then increased to230° C. and held at that temperature for 2 hours.

The reaction temperature is then lowered to 140° C., and 0.7 g hexanoicacid is added to the reaction flask, which is held at 140° C. for 10minutes.

A 0.5 monolayer thick ZnSSe shell is formed by drop-wise addition of 21mg diethyl zinc, 13 mg bis(trimethylsilyl)selenide, and 10 mghexamethyldisilthiane in 1 ml ODE to the reaction mixture. After ZnSSeprecursor addition, the reaction temperature is held at 140° C. for 30minutes.

A 2 monolayer thick ZnS shell is then formed by drop-wise addition of110 mg diethyl zinc and 106 mg hexamethyldisilthiane in 2 ml ODE to thereaction mixture. Ten minutes after the ZnS precursor addition, thereaction is stopped by removing the heating element.

Synthesis of InP Core for Red-Emitting Core/Shell Dots

To produce the InP cores, 5 g of trioctylphosphine oxide (TOPO), 1.46 gof indium acetate (5 mmol), and 3.16 g of lauric acid (15.8 mmol) areadded to a reaction flask. The mixture is heated to 160° C. for 40minutes under nitrogen, and then 250° C. for 20 minutes under vacuum.The reaction temperature is then increased to 300° C. under N₂ flow. Atthis temperature, 0.25 g tris(trimethylsilyl)phosphine (1 mmol) in 3 g1-octadecene (ODE) is quickly injected into the reaction flask, andreaction temperature is kept at 260° C. After 5 minutes, the reaction isstopped by removing the heating element, and the reaction solution isallowed to cool to room temperature. 8 ml toluene is added to thereaction mixture in the glove box, and the InP dots are precipitated outby addition of 20 ml ethanol to the mixture followed by centrifugationand decantation of the supernatant. The InP dots obtained are thendissolved in hexane. The dot concentration is determined by UV-Visabsorption measurement based on the bulk InP extinction coefficient at350 nm.

Indium Enrichment and Shelling Process for Red-Emitting Dots

To achieve indium core enrichment, 25 mg InP cores in hexane solutionand 5 g indium laurate in ODE (from the step entitled “Indium LauratePrecursor Preparation”) are added to a reaction flask. The mixture isput under vacuum for 10 minutes at room temperature. The temperature isthen increased to 230° C. and held at that temperature for 2 hours.

The reaction temperature is then lowered to room temperature, 0.7 ghexanoic acid is added to the reaction flask, and the temperature isincreased to 80° C.

A 0.5 monolayer thick ZnSSe shell is formed by drop-wise addition of 14mg diethyl zinc, 8 mg bis(trimethylsilyl)selenide, and 7 mghexamethyldisilthiane in 1 ml ODE to the reaction mixture. After ZnSSeprecursor addition, the reaction temperature is held at 80° C. for 10minutes and then the temperature is increased to 140° C. and held for 30minutes.

A 2 monolayer thick ZnS shell is then formed by drop-wise addition of 69mg diethyl zinc and 66 mg hexamethyldisilthiane in 2 mL ODE to thereaction mixture. 10 minutes after the ZnS precursor addition, thereaction is stopped by removing the heating element.

DDSA Ligand Exchange Procedure for InP/ZnSeS/ZnS Dots (Green-Emitting orRed-Emitting)

After the shelling reaction, the reaction mixture is allowed to cooldown to room temperature. White precipitate is removed bycentrifugation, resulting in a clear solution of dots in ODE. 30-50 mgDDSA (dodecenyl succinic acid) is added to 1 ml dot solution and heatedfor 3 to 15 hours at 90° C. After ligand exchange, the dots areprecipitated by adding 6 ml ethanol to 1 ml dot solution, followed bycentrifugation, decantation of the supernatant, and drying under vacuum.The dried dots are dissolved in hexane for quantum yield measurement.

Quantum Yield Measurement

On the basis of following equation, relative quantum yield of quantumdots is calculated using fluorescein dye as a reference forgreen-emitting dots at the 440 nm excitation wavelength and rhodamine640 as a reference for red-emitting dots at the 540 nm excitationwavelength:

$\Phi_{x} = {{\Phi_{ST}\left( \frac{{Grad}_{x}}{{Grad}_{ST}} \right)}\left( \frac{\eta_{x}^{2}}{\eta_{ST}^{2}} \right)}$

The subscripts ST and X denote the standard (reference dye) and thequantum dot solution (test sample), respectively. Φx is the quantumyield of the dots, and Φ_(ST) is the quantum yield of the reference dye.Grad=(I/A), I is the area under the emission peak (wavelength scale); Ais the absorbance at excitation wavelength. η is the refractive index ofdye or nanostructure in the solvent. See, e.g., Williams et al. (1983)“Relative fluorescence quantum yields using a computer controlledluminescence spectrometer” Analyst 108:1067.

Characterization of InP/ZnSSe/ZnS Quantum Dots

FIGS. 1A and 1B show TEM images of InP/ZnSSe/ZnS quantum dotssynthesized basically as described above.

Optical characterization of green-emitting InP/ZnSSe/S quantum dotsproduced basically as described above is illustrated in FIGS. 2A-2E.FIGS. 2B and 2C present absorption and photoluminescence spectra offluorescein dye. FIGS. 2D and 2E present absorption andphotoluminescence spectra of InP/ZnSSe/S quantum dots. FIG. 2Aillustrates measurement of quantum yield of the dots based onfluorescein.

Optical characterization of red-emitting InP/ZnSSe/S quantum dotsproduced basically as described above is illustrated in FIGS. 3A-3E.FIGS. 3B and 3C present absorption and photoluminescence spectra ofrhodamine 640 dye. FIGS. 3D and 3E present absorption andphotoluminescence spectra of InP/ZnSSe/S quantum dots. FIG. 3Aillustrates measurement of quantum yield of the dots based on rhodamine640.

Representative optical data for red- and green-emitting quantum dotsproduced basically as described above are presented in Table 1.

TABLE 1 Representative optical data for green- and red-emittingInP/ZnSeS/ZnS quantum dots. Emission maximum Quantum yield, Full widthat half wavelength, nm % maximum, nm 525 75 40 546 85 50 636 65 45

Example 2: Zinc Sulfide Shell Formation Using an Organic Thiol SulfurPrecursor

Green-emitting InP cores are synthesized as described above. To achieveindium core enrichment, 25 mg InP cores in solution in hexane, 6 ml ODE,and 0.5 g of indium laurate in ODE (prepared as detailed above) areadded to a reaction flask. The mixture is put under vacuum for 10minutes at room temperature. The temperature is then increased to 230°C. and held at that temperature for 2 hours.

The reaction temperature is then lowered to 140° C., and 0.7 g hexanoicacid is added to the reaction flask, which is held at 140° C. for 10minutes. A 0.5 monolayer thick ZnSSe shell is formed by drop-wiseaddition of 21 mg diethyl zinc, 13 mg bis(trimethylsilyl)selenide, and10 mg hexamethyldisilthiane in 1 ml ODE to the reaction mixture over 2min. After ZnSSe precursor addition, the reaction temperature is held at140° C. for 30 minutes. The temperature is then increased to 200° C. Atwo monolayer thick ZnS shell is then formed by drop-wise addition of110 mg diethyl zinc and 120 mg 1-dodecanethiol in 4 ml ODE to thereaction mixture over 40 min by syringe pump. Ten minutes after the ZnSprecursor addition, the reaction is stopped by removing the heatingelement. DDSA ligand exchange is performed as described above.

Representative optical data for green-emitting quantum dots producedbasically as described above are presented in Table 2.

TABLE 2 Representative optical data for green-emitting InP/ZnSeS/ZnSquantum dots. Emission maximum Quantum yield, Full width at halfwavelength, nm % maximum, nm 527 74 41

While the foregoing invention has been described in some detail forpurposes of clarity and understanding, it will be clear to one skilledin the art from a reading of this disclosure that various changes inform and detail can be made without departing from the true scope of theinvention. For example, all the techniques and apparatus described abovecan be used in various combinations. All publications, patents, patentapplications, and/or other documents cited in this application areincorporated by reference in their entirety for all purposes to the sameextent as if each individual publication, patent, patent application,and/or other document were individually indicated to be incorporated byreference for all purposes.

1.-41. (canceled)
 42. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 70% or greater, wherein a photoluminescence spectrum of the population has a full width at half maximum of 35 nm or less, and wherein the member nanostructures comprise InP.
 43. The composition of claim 42, wherein the population displays a photoluminescence quantum yield of 75% or greater.
 44. The composition of claim 42, wherein the population displays a photoluminescence quantum yield of 80% or greater.
 45. The composition of claim 42, wherein the population displays a photoluminescence quantum yield of 85% or greater. 46.-49. (canceled)
 50. The composition of claim 42, wherein a photoluminescence spectrum of the population has an emission maximum between 450 nm and 750 nm.
 51. The composition of claim 42, wherein a photoluminescence spectrum of the population has an emission maximum between 500 nm and 650 nm.
 52. The composition of claim 42, wherein a photoluminescence spectrum of the population has an emission maximum between 500 nm and 560 nm.
 53. The composition of claim 42, wherein a photoluminescence spectrum of the population has an emission maximum between 500 nm and 540 nm.
 54. The composition of claim 42, wherein a photoluminescence spectrum of the population has an emission maximum between 600 nm and 650 nm.
 55. The composition of claim 42, wherein the nanostructures are InP/ZnS_(x)Se_(1-x)/ZnS core/shell quantum dots, where 0≤x≤1.
 56. The composition of claim 55, wherein 0.25≤x≤0.75.
 57. The composition of claim 56, wherein x is about 0.5.
 58. The composition of claim 55, wherein the InP cores have an average diameter between about 15 Å and about 20 Å.
 59. The composition of claim 58, wherein the ZnS_(x)Se_(1-x) shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.
 60. The composition of claim 55, comprising a C5-C8 carboxylic acid ligand bound to the nanostructures, which ligand is an unbranched alkyl carboxylic acid.
 61. The composition of claim 60, wherein the ligand is hexanoic acid.
 62. The composition of claim 60, comprising a dicarboxylic or polycarboxylic acid ligand bound to the nanostructures.
 63. The composition of claim 62, wherein the dicarboxylic or polycarboxylic acid ligand is dodecenyl succinic acid.
 64. The composition of claim 42, wherein the nanostructures are quantum dots having an average diameter between about 30 Å and about 36 Å.
 65. The composition of claim 64, wherein the nanostructures comprise InP cores having an average diameter between about 15 Å and about 20 Å.
 66. The composition of claim 42, comprising a C5-C8 carboxylic acid ligand bound to the nanostructures.
 67. The composition of claim 66, wherein the C5-C8 carboxylic acid ligand is an unbranched alkyl carboxylic acid.
 68. The composition of claim 66, wherein the C5-C8 carboxylic acid ligand is hexanoic acid.
 69. The composition of claim 66, comprising a dicarboxylic or polycarboxylic acid ligand bound to the surface of the nanostructures.
 70. The composition of claim 69, wherein the dicarboxylic or polycarboxylic acid ligand is dodecenyl succinic acid.
 71. The composition of claim 42, wherein the nanostructures are embedded in a matrix.
 72. A device comprising the composition of claim
 42. 73.-146. (canceled) 